Characterization of accumulation layer capacitance for extracting data on high-k gate dielectrics

Samares Kar, Surendra Rawat, Shaloo Rakheja, Dharmendar Reddy

Research output: Contribution to journalArticle

Abstract

A new parameter extraction technique has been outlined for high-k gate dielectrics that directly yields values of the dielectric capacitance Cdi, the accumulation layer surface potential quotient, βacc, the flat-band voltage, the surface potential s, the dielectric voltage, the channel doping density and the interface charge density at flat-band. The parallel capacitance, Cp(= Csc + Cit), was found to be an exponential function of φs in the strong accumulation regime, for seven different high-k gate dielectrics. The slope of the experimental InCps) plot, i.e., Βacc , was found to depend strongly on the physical properties of the high-k dielectric, i.e., was inversely proportional to [(φbm*/m)1/2K/Cdi], where φb is the band offset, and m* is the effective tunneling mass. Extraction of Βacc represented an experimental carrier confinement index for the accumulation layer and an experimental gate-dielectric direct-tunneling current index. Βacc may also be an effective tool for monitoring the effects of post-deposition annealing/processing.

Original languageEnglish (US)
Pages (from-to)1187-1193
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume52
Issue number6
DOIs
StatePublished - Jun 2005

Fingerprint

Gate dielectrics
Capacitance
capacitance
Surface potential
Parameter extraction
Exponential functions
Electric potential
Charge density
Physical properties
Doping (additives)
Annealing
quotients
Monitoring
exponential functions
electric potential
Processing
surface layers
physical properties
plots
slopes

Keywords

  • Capacitance measurements
  • Dielectric materials
  • MOS capacitors
  • MOSFETs
  • Parameter estimation
  • Quantization
  • Semiconductor device measurements
  • Semiconductor insulator interface

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Characterization of accumulation layer capacitance for extracting data on high-k gate dielectrics. / Kar, Samares; Rawat, Surendra; Rakheja, Shaloo; Reddy, Dharmendar.

In: IEEE Transactions on Electron Devices, Vol. 52, No. 6, 06.2005, p. 1187-1193.

Research output: Contribution to journalArticle

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