Atomistic simulation of SiH interactions with silicon surfaces during deposition from silane containing plasmas

Shyam Ramalingam, Dimitrios Maroudas, Eray Aydil

Research output: Contribution to journalArticle

Abstract

A systematic atomic-scale analysis is presented of the interactions of SiH radicals from a silane plasma with amorphous hydrogenated silicon (a-Si:H) film surfaces based on molecular dynamics and Monte Carlo simulations. The coordination of the silicon surface atoms and the hydrogen surface concentration determine the mechanisms by which the SiH radical interacts with the surface and attaches itself to the film, as well as the "sticking" probability of the radical. On a-Si:H surfaces with low hydrogen concentration, SiH radicals remain on the surface and attach to silicon dangling bonds. In contrast, on a-Si:H surfaces with high hydrogen concentration and lower density of dangling bonds, radicals penetrate into the bulk film and attach to subsurface silicon atoms. An average reaction probability of 95% is predicted, which is in excellent agreement with recent experimental data.

Original languageEnglish (US)
Pages (from-to)578-580
Number of pages3
JournalApplied Physics Letters
Volume72
Issue number5
DOIs
StatePublished - Dec 1 1998

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silanes
silicon
simulation
interactions
hydrogen
amorphous silicon
atoms
molecular dynamics

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Atomistic simulation of SiH interactions with silicon surfaces during deposition from silane containing plasmas. / Ramalingam, Shyam; Maroudas, Dimitrios; Aydil, Eray.

In: Applied Physics Letters, Vol. 72, No. 5, 01.12.1998, p. 578-580.

Research output: Contribution to journalArticle

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