Atomistic calculation of the SiH3 surface reactivity during plasma deposition of amorphous silicon thin films

Mayur S. Valipa, Eray Aydil, Dimitrios Maroudas

Research output: Contribution to journalArticle

Abstract

We report a direct, statistically significant calculation of the surface reactivity of the SiH3 radical on hydrogenated amorphous silicon (a-Si:H) using molecular-dynamics simulations of repeated impingement of SiH3 radicals on growth surfaces of smooth a-Si:H films over the temperature range 475-800 K. SiH3 can either incorporate into the film by adsorbing onto a surface Si dangling bond or inserting into Si-Si bonds (sticking), or abstract surface H through Eley-Rideal (ER) or Langmuir-Hinshelwood (LH) pathways to produce SiH4 gas, or react with another surface SiH3 to desorb as Si2H6 (recombination), or leave the film by reflection or desorption. The overall surface reaction probability, β, includes both radical sticking and recombination. In agreement with experimental measurements, β is almost constant over the temperature range studied, as are the probabilities for sticking and recombination, s and γ, respectively; the calculated mean value of β is 0.47 ± 0.03. Energetic analysis of the various surface reactions shows that radical adsorption, radical insertion, and ER abstraction are barrierless processes, which explains the measured temperature independence of β. LH abstraction is activated, but competes with disilane formation, yielding a temperature-independent γ. Also, LH abstraction leads to H elimination from a-Si:H during growth and can partly explain the experimentally measured temperature dependence of the H content in the a-Si:H film.

Original languageEnglish (US)
JournalSurface Science
Volume572
Issue number2-3
DOIs
StatePublished - Nov 20 2004

Fingerprint

Plasma deposition
Amorphous silicon
amorphous silicon
reactivity
Thin films
thin films
Surface reactions
surface reactions
Temperature
Dangling bonds
temperature
impingement
Molecular dynamics
insertion
elimination
Desorption
Gases
desorption
molecular dynamics
Adsorption

Keywords

  • Amorphous thin films
  • Hydrogen atom
  • Molecular dynamics
  • Plasma processing
  • Silicon
  • Surface chemical reaction

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Atomistic calculation of the SiH3 surface reactivity during plasma deposition of amorphous silicon thin films. / Valipa, Mayur S.; Aydil, Eray; Maroudas, Dimitrios.

In: Surface Science, Vol. 572, No. 2-3, 20.11.2004.

Research output: Contribution to journalArticle

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