Atomic-scale analysis of plasma-enhanced chemical vapor deposition from SiH4/H2 plasmas on Si substrates

Shyam Ramalingam, Dimitrios Maroudas, Eray Aydil

Research output: Contribution to journalConference article

Abstract

We present a systematic atomic-scale analysis of the interactions of SiH3 radicals originating in silane containing discharges with Si(001)-(2×1) and H-terminated Si(001)-(2×1) surfaces. Through simulations, we show that the hydrogen coverage of the surface is the key factor that controls both the surface reaction mechanism and the reaction probability. The SiH3 radical reacts readily with the pristine Si(001)-(2×1) surface during the initial stages of growth while its reactivity with the corresponding H-terminated surface is considerably lower. Deposition of a-Si:H from SiH3 radicals has also been simulated by repeatedly impinging SiH3 radicals onto Si(001)-(2×1) surfaces maintained at 500 °C. During deposition under these conditions, the dominant mechanism of hydrogen removal from the surface is through abstraction by SiH3 radicals, which subsequently return to the gas phase as silane. The important reaction processes that take place during film growth have been identified and their energetics has been analyzed.

Original languageEnglish (US)
Pages (from-to)673-678
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume507
StatePublished - Jan 1 1999
EventProceedings of the 1998 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 13 1998Apr 14 1998

Fingerprint

Plasma enhanced chemical vapor deposition
vapor deposition
Plasmas
Substrates
Silanes
silanes
Hydrogen
Surface reactions
Film growth
hydrogen
surface reactions
reactivity
Gases
vapor phases
simulation
interactions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Atomic-scale analysis of plasma-enhanced chemical vapor deposition from SiH4/H2 plasmas on Si substrates. / Ramalingam, Shyam; Maroudas, Dimitrios; Aydil, Eray.

In: Materials Research Society Symposium - Proceedings, Vol. 507, 01.01.1999, p. 673-678.

Research output: Contribution to journalConference article

@article{933185b214204eae92c07e44c857bc74,
title = "Atomic-scale analysis of plasma-enhanced chemical vapor deposition from SiH4/H2 plasmas on Si substrates",
abstract = "We present a systematic atomic-scale analysis of the interactions of SiH3 radicals originating in silane containing discharges with Si(001)-(2×1) and H-terminated Si(001)-(2×1) surfaces. Through simulations, we show that the hydrogen coverage of the surface is the key factor that controls both the surface reaction mechanism and the reaction probability. The SiH3 radical reacts readily with the pristine Si(001)-(2×1) surface during the initial stages of growth while its reactivity with the corresponding H-terminated surface is considerably lower. Deposition of a-Si:H from SiH3 radicals has also been simulated by repeatedly impinging SiH3 radicals onto Si(001)-(2×1) surfaces maintained at 500 °C. During deposition under these conditions, the dominant mechanism of hydrogen removal from the surface is through abstraction by SiH3 radicals, which subsequently return to the gas phase as silane. The important reaction processes that take place during film growth have been identified and their energetics has been analyzed.",
author = "Shyam Ramalingam and Dimitrios Maroudas and Eray Aydil",
year = "1999",
month = "1",
day = "1",
language = "English (US)",
volume = "507",
pages = "673--678",
journal = "Materials Research Society Symposium - Proceedings",
issn = "0272-9172",
publisher = "Materials Research Society",

}

TY - JOUR

T1 - Atomic-scale analysis of plasma-enhanced chemical vapor deposition from SiH4/H2 plasmas on Si substrates

AU - Ramalingam, Shyam

AU - Maroudas, Dimitrios

AU - Aydil, Eray

PY - 1999/1/1

Y1 - 1999/1/1

N2 - We present a systematic atomic-scale analysis of the interactions of SiH3 radicals originating in silane containing discharges with Si(001)-(2×1) and H-terminated Si(001)-(2×1) surfaces. Through simulations, we show that the hydrogen coverage of the surface is the key factor that controls both the surface reaction mechanism and the reaction probability. The SiH3 radical reacts readily with the pristine Si(001)-(2×1) surface during the initial stages of growth while its reactivity with the corresponding H-terminated surface is considerably lower. Deposition of a-Si:H from SiH3 radicals has also been simulated by repeatedly impinging SiH3 radicals onto Si(001)-(2×1) surfaces maintained at 500 °C. During deposition under these conditions, the dominant mechanism of hydrogen removal from the surface is through abstraction by SiH3 radicals, which subsequently return to the gas phase as silane. The important reaction processes that take place during film growth have been identified and their energetics has been analyzed.

AB - We present a systematic atomic-scale analysis of the interactions of SiH3 radicals originating in silane containing discharges with Si(001)-(2×1) and H-terminated Si(001)-(2×1) surfaces. Through simulations, we show that the hydrogen coverage of the surface is the key factor that controls both the surface reaction mechanism and the reaction probability. The SiH3 radical reacts readily with the pristine Si(001)-(2×1) surface during the initial stages of growth while its reactivity with the corresponding H-terminated surface is considerably lower. Deposition of a-Si:H from SiH3 radicals has also been simulated by repeatedly impinging SiH3 radicals onto Si(001)-(2×1) surfaces maintained at 500 °C. During deposition under these conditions, the dominant mechanism of hydrogen removal from the surface is through abstraction by SiH3 radicals, which subsequently return to the gas phase as silane. The important reaction processes that take place during film growth have been identified and their energetics has been analyzed.

UR - http://www.scopus.com/inward/record.url?scp=0032651742&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032651742&partnerID=8YFLogxK

M3 - Conference article

VL - 507

SP - 673

EP - 678

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

ER -