Atomic-scale analysis of deposition and characterization of a-Si:H thin films grown from SiH radical precursor

Saravanapriyan Sriraman, Eray Aydil, Dimitrios Maroudas

Research output: Contribution to journalArticle

Abstract

Growth of hydrogenated amorphous silicon films (a-Si:H) on an initial H-terminated Si(001)(2×1) substrate at T=500 K was studied through molecular-dynamics (MD) simulations of repeated impingement of SiH radicals to elucidate the effects of reactive minority species on the structural quality of the deposited films. The important reactions contributing to film growth were identified through detailed visualization of radical-surface interaction trajectories. These reactions include (i) insertion of SiH into Si-Si bonds, (ii) adsorption onto surface dangling bonds, (iii) surface H abstraction by impinging SiH radicals through an Eley-Rideal mechanism, (iv) surface adsorption by penetration into subsurface layers or dissociation leading to interstitial atomic hydrogen, (v) desorption of interstitial hydrogen into the gas phase, (vi) formation of higher surface hydrides through the exchange of hydrogen, and (vii) dangling-bond-mediated dissociation of surface hydrides into monohydrides. The MD simulations of a-Si:H film growth predict an overall surface reaction probability of 95% for the SiH radical that is in good agreement with experimental measurements. Structural and chemical characterization of the deposited films was based on the detailed analysis of evolution of the films' structure, surface morphology and roughness, surface reactivity, and surface composition. The analysis revealed that the deposited films exhibit high dangling bond densities and rough surface morphologies. In addition, the films are abundant in voids and columnar structures that are detrimental to producing device-quality a-Si:H thin films.

Original languageEnglish (US)
Pages (from-to)842-852
Number of pages11
JournalJournal of Applied Physics
Volume92
Issue number2
DOIs
StatePublished - Jul 15 2002

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thin films
surface reactions
hydrides
interstitials
hydrogen
dissociation
molecular dynamics
adsorption
impingement
minorities
silicon films
amorphous silicon
voids
insertion
surface roughness
penetration
reactivity
simulation
desorption
trajectories

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Atomic-scale analysis of deposition and characterization of a-Si:H thin films grown from SiH radical precursor. / Sriraman, Saravanapriyan; Aydil, Eray; Maroudas, Dimitrios.

In: Journal of Applied Physics, Vol. 92, No. 2, 15.07.2002, p. 842-852.

Research output: Contribution to journalArticle

@article{c0bfb45435d74a2ab6897e5d51f400eb,
title = "Atomic-scale analysis of deposition and characterization of a-Si:H thin films grown from SiH radical precursor",
abstract = "Growth of hydrogenated amorphous silicon films (a-Si:H) on an initial H-terminated Si(001)(2×1) substrate at T=500 K was studied through molecular-dynamics (MD) simulations of repeated impingement of SiH radicals to elucidate the effects of reactive minority species on the structural quality of the deposited films. The important reactions contributing to film growth were identified through detailed visualization of radical-surface interaction trajectories. These reactions include (i) insertion of SiH into Si-Si bonds, (ii) adsorption onto surface dangling bonds, (iii) surface H abstraction by impinging SiH radicals through an Eley-Rideal mechanism, (iv) surface adsorption by penetration into subsurface layers or dissociation leading to interstitial atomic hydrogen, (v) desorption of interstitial hydrogen into the gas phase, (vi) formation of higher surface hydrides through the exchange of hydrogen, and (vii) dangling-bond-mediated dissociation of surface hydrides into monohydrides. The MD simulations of a-Si:H film growth predict an overall surface reaction probability of 95{\%} for the SiH radical that is in good agreement with experimental measurements. Structural and chemical characterization of the deposited films was based on the detailed analysis of evolution of the films' structure, surface morphology and roughness, surface reactivity, and surface composition. The analysis revealed that the deposited films exhibit high dangling bond densities and rough surface morphologies. In addition, the films are abundant in voids and columnar structures that are detrimental to producing device-quality a-Si:H thin films.",
author = "Saravanapriyan Sriraman and Eray Aydil and Dimitrios Maroudas",
year = "2002",
month = "7",
day = "15",
doi = "10.1063/1.1483920",
language = "English (US)",
volume = "92",
pages = "842--852",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

TY - JOUR

T1 - Atomic-scale analysis of deposition and characterization of a-Si:H thin films grown from SiH radical precursor

AU - Sriraman, Saravanapriyan

AU - Aydil, Eray

AU - Maroudas, Dimitrios

PY - 2002/7/15

Y1 - 2002/7/15

N2 - Growth of hydrogenated amorphous silicon films (a-Si:H) on an initial H-terminated Si(001)(2×1) substrate at T=500 K was studied through molecular-dynamics (MD) simulations of repeated impingement of SiH radicals to elucidate the effects of reactive minority species on the structural quality of the deposited films. The important reactions contributing to film growth were identified through detailed visualization of radical-surface interaction trajectories. These reactions include (i) insertion of SiH into Si-Si bonds, (ii) adsorption onto surface dangling bonds, (iii) surface H abstraction by impinging SiH radicals through an Eley-Rideal mechanism, (iv) surface adsorption by penetration into subsurface layers or dissociation leading to interstitial atomic hydrogen, (v) desorption of interstitial hydrogen into the gas phase, (vi) formation of higher surface hydrides through the exchange of hydrogen, and (vii) dangling-bond-mediated dissociation of surface hydrides into monohydrides. The MD simulations of a-Si:H film growth predict an overall surface reaction probability of 95% for the SiH radical that is in good agreement with experimental measurements. Structural and chemical characterization of the deposited films was based on the detailed analysis of evolution of the films' structure, surface morphology and roughness, surface reactivity, and surface composition. The analysis revealed that the deposited films exhibit high dangling bond densities and rough surface morphologies. In addition, the films are abundant in voids and columnar structures that are detrimental to producing device-quality a-Si:H thin films.

AB - Growth of hydrogenated amorphous silicon films (a-Si:H) on an initial H-terminated Si(001)(2×1) substrate at T=500 K was studied through molecular-dynamics (MD) simulations of repeated impingement of SiH radicals to elucidate the effects of reactive minority species on the structural quality of the deposited films. The important reactions contributing to film growth were identified through detailed visualization of radical-surface interaction trajectories. These reactions include (i) insertion of SiH into Si-Si bonds, (ii) adsorption onto surface dangling bonds, (iii) surface H abstraction by impinging SiH radicals through an Eley-Rideal mechanism, (iv) surface adsorption by penetration into subsurface layers or dissociation leading to interstitial atomic hydrogen, (v) desorption of interstitial hydrogen into the gas phase, (vi) formation of higher surface hydrides through the exchange of hydrogen, and (vii) dangling-bond-mediated dissociation of surface hydrides into monohydrides. The MD simulations of a-Si:H film growth predict an overall surface reaction probability of 95% for the SiH radical that is in good agreement with experimental measurements. Structural and chemical characterization of the deposited films was based on the detailed analysis of evolution of the films' structure, surface morphology and roughness, surface reactivity, and surface composition. The analysis revealed that the deposited films exhibit high dangling bond densities and rough surface morphologies. In addition, the films are abundant in voids and columnar structures that are detrimental to producing device-quality a-Si:H thin films.

UR - http://www.scopus.com/inward/record.url?scp=0037101023&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037101023&partnerID=8YFLogxK

U2 - 10.1063/1.1483920

DO - 10.1063/1.1483920

M3 - Article

AN - SCOPUS:0037101023

VL - 92

SP - 842

EP - 852

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 2

ER -