Application of thin epitaxial hydrogenated si layers to high efficiency heterojunction solar cells on N-type si substrates

Bahman Hekmatshoar, Davood Shahrjerdi, Devendra K. Sadana

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We show that a thin (<20nm) stack comprised of n+ doped hydrogenated crystalline silicon (c-Si:H) and n+ doped hydrogenated amorphous silicon (a-Si:H) can provide an effective back-surface-field for heterojunction solar cells on n-type crystalline silicon (c-Si) substrates. The c-Si:H and a-Si:H layers were grown in the same plasma-enhanced chemical vapor deposition (PECVD) reactor at deposition temperatures close to 200°C. This technique was used to fabricate heterojunction solar cells with open-circuit voltages over 700mV and active-area conversion efficiencies of 21.4% on n-type c-Si substrates.

Original languageEnglish (US)
Title of host publication2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages971-972
Number of pages2
ISBN (Print)9781479943982
DOIs
StatePublished - Oct 15 2014
Event40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States
Duration: Jun 8 2014Jun 13 2014

Other

Other40th IEEE Photovoltaic Specialist Conference, PVSC 2014
CountryUnited States
CityDenver
Period6/8/146/13/14

Fingerprint

Silicon
Heterojunctions
Solar cells
Crystalline materials
Substrates
Open circuit voltage
Plasma enhanced chemical vapor deposition
Amorphous silicon
Conversion efficiency
Temperature

Keywords

  • heterojunction solar cells
  • plasma CVD
  • silicon

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Hekmatshoar, B., Shahrjerdi, D., & Sadana, D. K. (2014). Application of thin epitaxial hydrogenated si layers to high efficiency heterojunction solar cells on N-type si substrates. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 (pp. 971-972). [6925075] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2014.6925075

Application of thin epitaxial hydrogenated si layers to high efficiency heterojunction solar cells on N-type si substrates. / Hekmatshoar, Bahman; Shahrjerdi, Davood; Sadana, Devendra K.

2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 971-972 6925075.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hekmatshoar, B, Shahrjerdi, D & Sadana, DK 2014, Application of thin epitaxial hydrogenated si layers to high efficiency heterojunction solar cells on N-type si substrates. in 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014., 6925075, Institute of Electrical and Electronics Engineers Inc., pp. 971-972, 40th IEEE Photovoltaic Specialist Conference, PVSC 2014, Denver, United States, 6/8/14. https://doi.org/10.1109/PVSC.2014.6925075
Hekmatshoar B, Shahrjerdi D, Sadana DK. Application of thin epitaxial hydrogenated si layers to high efficiency heterojunction solar cells on N-type si substrates. In 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 971-972. 6925075 https://doi.org/10.1109/PVSC.2014.6925075
Hekmatshoar, Bahman ; Shahrjerdi, Davood ; Sadana, Devendra K. / Application of thin epitaxial hydrogenated si layers to high efficiency heterojunction solar cells on N-type si substrates. 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 971-972
@inproceedings{bbfe94394f5f4db1aeb7e15f11e84eff,
title = "Application of thin epitaxial hydrogenated si layers to high efficiency heterojunction solar cells on N-type si substrates",
abstract = "We show that a thin (<20nm) stack comprised of n+ doped hydrogenated crystalline silicon (c-Si:H) and n+ doped hydrogenated amorphous silicon (a-Si:H) can provide an effective back-surface-field for heterojunction solar cells on n-type crystalline silicon (c-Si) substrates. The c-Si:H and a-Si:H layers were grown in the same plasma-enhanced chemical vapor deposition (PECVD) reactor at deposition temperatures close to 200°C. This technique was used to fabricate heterojunction solar cells with open-circuit voltages over 700mV and active-area conversion efficiencies of 21.4{\%} on n-type c-Si substrates.",
keywords = "heterojunction solar cells, plasma CVD, silicon",
author = "Bahman Hekmatshoar and Davood Shahrjerdi and Sadana, {Devendra K.}",
year = "2014",
month = "10",
day = "15",
doi = "10.1109/PVSC.2014.6925075",
language = "English (US)",
isbn = "9781479943982",
pages = "971--972",
booktitle = "2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Application of thin epitaxial hydrogenated si layers to high efficiency heterojunction solar cells on N-type si substrates

AU - Hekmatshoar, Bahman

AU - Shahrjerdi, Davood

AU - Sadana, Devendra K.

PY - 2014/10/15

Y1 - 2014/10/15

N2 - We show that a thin (<20nm) stack comprised of n+ doped hydrogenated crystalline silicon (c-Si:H) and n+ doped hydrogenated amorphous silicon (a-Si:H) can provide an effective back-surface-field for heterojunction solar cells on n-type crystalline silicon (c-Si) substrates. The c-Si:H and a-Si:H layers were grown in the same plasma-enhanced chemical vapor deposition (PECVD) reactor at deposition temperatures close to 200°C. This technique was used to fabricate heterojunction solar cells with open-circuit voltages over 700mV and active-area conversion efficiencies of 21.4% on n-type c-Si substrates.

AB - We show that a thin (<20nm) stack comprised of n+ doped hydrogenated crystalline silicon (c-Si:H) and n+ doped hydrogenated amorphous silicon (a-Si:H) can provide an effective back-surface-field for heterojunction solar cells on n-type crystalline silicon (c-Si) substrates. The c-Si:H and a-Si:H layers were grown in the same plasma-enhanced chemical vapor deposition (PECVD) reactor at deposition temperatures close to 200°C. This technique was used to fabricate heterojunction solar cells with open-circuit voltages over 700mV and active-area conversion efficiencies of 21.4% on n-type c-Si substrates.

KW - heterojunction solar cells

KW - plasma CVD

KW - silicon

UR - http://www.scopus.com/inward/record.url?scp=84912124767&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84912124767&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2014.6925075

DO - 10.1109/PVSC.2014.6925075

M3 - Conference contribution

SN - 9781479943982

SP - 971

EP - 972

BT - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014

PB - Institute of Electrical and Electronics Engineers Inc.

ER -