Anisotropy-driven quantum capacitance in multi-layered black phosphorus

Parijat Sengupta, Shaloo Rakheja

Research output: Contribution to journalArticle

Abstract

We report analytic results on quantum capacitance (Cq) measurements and their optical tuning in a dual-gated device with potassium-doped multi-layered black phosphorous (BP) as the channel material. The two-dimensional (2D) layered BP is highly anisotropic with a semi-Dirac dispersion marked by linear and quadratic contributions. The Cq calculations mirror this asymmetric arrangement. A further increase in the asymmetry and consequently Cq is predicted by photon-dressing the BP dispersion. To achieve this and tune Cq in a field-effect transistor (FET), we suggest a configuration wherein a pair of electrostatic (top) and optical (back) gates clamp a BP channel. The back gate shines an optical pulse to rearrange the dispersion of the 2D BP. Analytic calculations are done with Floquet Hamiltonians in the off-resonant regime. The value of such Cq calculations, in addition to its role in adjusting the current drive of an FET, is discussed in the context of metal-insulator and topological phase transitions and enhancements to the thermoelectric figure of merit.

Original languageEnglish (US)
Article number161902
JournalApplied Physics Letters
Volume111
Issue number16
DOIs
StatePublished - Oct 16 2017

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phosphorus
capacitance
anisotropy
field effect transistors
clamps
figure of merit
potassium
adjusting
tuning
asymmetry
insulators
electrostatics
mirrors
augmentation
photons
configurations
pulses
metals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Anisotropy-driven quantum capacitance in multi-layered black phosphorus. / Sengupta, Parijat; Rakheja, Shaloo.

In: Applied Physics Letters, Vol. 111, No. 16, 161902, 16.10.2017.

Research output: Contribution to journalArticle

@article{8412bc185cb942dab42209c906c3a7f5,
title = "Anisotropy-driven quantum capacitance in multi-layered black phosphorus",
abstract = "We report analytic results on quantum capacitance (Cq) measurements and their optical tuning in a dual-gated device with potassium-doped multi-layered black phosphorous (BP) as the channel material. The two-dimensional (2D) layered BP is highly anisotropic with a semi-Dirac dispersion marked by linear and quadratic contributions. The Cq calculations mirror this asymmetric arrangement. A further increase in the asymmetry and consequently Cq is predicted by photon-dressing the BP dispersion. To achieve this and tune Cq in a field-effect transistor (FET), we suggest a configuration wherein a pair of electrostatic (top) and optical (back) gates clamp a BP channel. The back gate shines an optical pulse to rearrange the dispersion of the 2D BP. Analytic calculations are done with Floquet Hamiltonians in the off-resonant regime. The value of such Cq calculations, in addition to its role in adjusting the current drive of an FET, is discussed in the context of metal-insulator and topological phase transitions and enhancements to the thermoelectric figure of merit.",
author = "Parijat Sengupta and Shaloo Rakheja",
year = "2017",
month = "10",
day = "16",
doi = "10.1063/1.4999380",
language = "English (US)",
volume = "111",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "16",

}

TY - JOUR

T1 - Anisotropy-driven quantum capacitance in multi-layered black phosphorus

AU - Sengupta, Parijat

AU - Rakheja, Shaloo

PY - 2017/10/16

Y1 - 2017/10/16

N2 - We report analytic results on quantum capacitance (Cq) measurements and their optical tuning in a dual-gated device with potassium-doped multi-layered black phosphorous (BP) as the channel material. The two-dimensional (2D) layered BP is highly anisotropic with a semi-Dirac dispersion marked by linear and quadratic contributions. The Cq calculations mirror this asymmetric arrangement. A further increase in the asymmetry and consequently Cq is predicted by photon-dressing the BP dispersion. To achieve this and tune Cq in a field-effect transistor (FET), we suggest a configuration wherein a pair of electrostatic (top) and optical (back) gates clamp a BP channel. The back gate shines an optical pulse to rearrange the dispersion of the 2D BP. Analytic calculations are done with Floquet Hamiltonians in the off-resonant regime. The value of such Cq calculations, in addition to its role in adjusting the current drive of an FET, is discussed in the context of metal-insulator and topological phase transitions and enhancements to the thermoelectric figure of merit.

AB - We report analytic results on quantum capacitance (Cq) measurements and their optical tuning in a dual-gated device with potassium-doped multi-layered black phosphorous (BP) as the channel material. The two-dimensional (2D) layered BP is highly anisotropic with a semi-Dirac dispersion marked by linear and quadratic contributions. The Cq calculations mirror this asymmetric arrangement. A further increase in the asymmetry and consequently Cq is predicted by photon-dressing the BP dispersion. To achieve this and tune Cq in a field-effect transistor (FET), we suggest a configuration wherein a pair of electrostatic (top) and optical (back) gates clamp a BP channel. The back gate shines an optical pulse to rearrange the dispersion of the 2D BP. Analytic calculations are done with Floquet Hamiltonians in the off-resonant regime. The value of such Cq calculations, in addition to its role in adjusting the current drive of an FET, is discussed in the context of metal-insulator and topological phase transitions and enhancements to the thermoelectric figure of merit.

UR - http://www.scopus.com/inward/record.url?scp=85031736075&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85031736075&partnerID=8YFLogxK

U2 - 10.1063/1.4999380

DO - 10.1063/1.4999380

M3 - Article

VL - 111

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 16

M1 - 161902

ER -