Analytic modeling of nonlinear current conduction in access regions of III-Nitride HEMTs

Kexin Li, Shaloo Rakheja

Research output: Contribution to journalArticle

Abstract

The transconductance degradation caused by the non-linear resistance of access regions in III-nitride high electron-mobility transistors (HEMTs) is mainly responsible for limiting the RF linearity of the transistor. In this paper, we use Landauer's transmission theory to develop an analytic electrothermal current-voltage (I-V) model of access regions in III-nitride HEMTs. With only 12 parameters, most of which have a physical origin and can be obtained through experimental calibration, the model is able to correctly predict the I-V behavior in access regions from the drift-diffusive to the quasi-ballistic transport regimes. Model accuracy is demonstrated by comparing the results against experimental and numerical hydrodynamic simulations of ungated transmission line structures with length scales ranging from few 10's of nanometers to 10's of micrometers.

Original languageEnglish (US)
Pages (from-to)131-136
Number of pages6
JournalMRS Advances
Volume3
Issue number3
DOIs
StatePublished - Jan 1 2018

Fingerprint

High electron mobility transistors
high electron mobility transistors
Nitrides
nitrides
conduction
Transconductance
transconductance
Ballistics
ballistics
transmission lines
linearity
micrometers
Electric lines
Transistors
transistors
Hydrodynamics
hydrodynamics
Calibration
degradation
Degradation

Keywords

  • electrical properties
  • nanoscale
  • nitride

ASJC Scopus subject areas

  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Analytic modeling of nonlinear current conduction in access regions of III-Nitride HEMTs. / Li, Kexin; Rakheja, Shaloo.

In: MRS Advances, Vol. 3, No. 3, 01.01.2018, p. 131-136.

Research output: Contribution to journalArticle

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