Abstract
In this paper, an improved physics-based virtual-source (VS) model to describe transport in quasi-ballistic transistors is discussed. The model is based on the Landauer scattering theory, and incorporates the effects of: 1) degeneracy on thermal velocity and mean free path of carriers in the channel; 2) drain-bias dependence of gate capacitance and VS charge, including the effects of band nonparabolicity; and 3) nonlinear resistance of the extrinsic device region on gm-degradation at high drain currents in the channel. The improved charge model captures the phenomenon of reduction in VS charge under nonequilibrium transport conditions in a quasi-ballistic transistor.
| Original language | English (US) |
|---|---|
| Article number | 7175024 |
| Pages (from-to) | 2786-2793 |
| Number of pages | 8 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 62 |
| Issue number | 9 |
| DOIs | |
| State | Published - Sep 1 2015 |
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Keywords
- carrier degeneracy
- III-V HEMTs
- nonlinear channel-access resistance
- quantum capacitance
- quasi-ballistic transport
- Si ETSOI
- virtual source (VS).
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Cite this
An Improved Virtual-Source-Based Transport Model for Quasi-Ballistic Transistors-Part I : Capturing Effects of Carrier Degeneracy, Drain-Bias Dependence of Gate Capacitance, and Nonlinear Channel-Access Resistance. / Rakheja, Shaloo; Lundstrom, Mark S.; Antoniadis, Dimitri A.
In: IEEE Transactions on Electron Devices, Vol. 62, No. 9, 7175024, 01.09.2015, p. 2786-2793.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - An Improved Virtual-Source-Based Transport Model for Quasi-Ballistic Transistors-Part I
T2 - Capturing Effects of Carrier Degeneracy, Drain-Bias Dependence of Gate Capacitance, and Nonlinear Channel-Access Resistance
AU - Rakheja, Shaloo
AU - Lundstrom, Mark S.
AU - Antoniadis, Dimitri A.
PY - 2015/9/1
Y1 - 2015/9/1
N2 - In this paper, an improved physics-based virtual-source (VS) model to describe transport in quasi-ballistic transistors is discussed. The model is based on the Landauer scattering theory, and incorporates the effects of: 1) degeneracy on thermal velocity and mean free path of carriers in the channel; 2) drain-bias dependence of gate capacitance and VS charge, including the effects of band nonparabolicity; and 3) nonlinear resistance of the extrinsic device region on gm-degradation at high drain currents in the channel. The improved charge model captures the phenomenon of reduction in VS charge under nonequilibrium transport conditions in a quasi-ballistic transistor.
AB - In this paper, an improved physics-based virtual-source (VS) model to describe transport in quasi-ballistic transistors is discussed. The model is based on the Landauer scattering theory, and incorporates the effects of: 1) degeneracy on thermal velocity and mean free path of carriers in the channel; 2) drain-bias dependence of gate capacitance and VS charge, including the effects of band nonparabolicity; and 3) nonlinear resistance of the extrinsic device region on gm-degradation at high drain currents in the channel. The improved charge model captures the phenomenon of reduction in VS charge under nonequilibrium transport conditions in a quasi-ballistic transistor.
KW - carrier degeneracy
KW - III-V HEMTs
KW - nonlinear channel-access resistance
KW - quantum capacitance
KW - quasi-ballistic transport
KW - Si ETSOI
KW - virtual source (VS).
UR - http://www.scopus.com/inward/record.url?scp=85027931449&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85027931449&partnerID=8YFLogxK
U2 - 10.1109/TED.2015.2457781
DO - 10.1109/TED.2015.2457781
M3 - Article
AN - SCOPUS:85027931449
VL - 62
SP - 2786
EP - 2793
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 9
M1 - 7175024
ER -