Advanced integrated sensor and layer transfer technologies for wearable bioelectronics

A. Alharbi, B. Nasri, T. Wu, Davood Shahrjerdi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We discuss two emerging technologies that are central for realizing an optically powered flexible bioelectronic system. First, we discuss layer transfer through controlled spalling technology for producing high-performance flexible electronics. We present three examples: (1) advanced-node ultra-thin body silicon integrated circuits on plastic, (2) strain engineering in flexible electronics, and (3) flexible GaAs photovoltaic energy harvesters. Second, a 4-terminal biosensor is presented that is compatible with ultra-thin body silicon CMOS technology. Through in vitro glucose sensing, we demonstrate that the 4-terminal integrated biosensor enables the amplification of biochemical signals at the device level. These advanced technologies can give rise to an unprecedented boost in the performance and functionality of next-generation wearable devices.

Original languageEnglish (US)
Title of host publication2016 IEEE International Electron Devices Meeting, IEDM 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages6.5.1-6.5.4
ISBN (Electronic)9781509039012
DOIs
StatePublished - Jan 31 2017
Event62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States
Duration: Dec 3 2016Dec 7 2016

Other

Other62nd IEEE International Electron Devices Meeting, IEDM 2016
CountryUnited States
CitySan Francisco
Period12/3/1612/7/16

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Alharbi, A., Nasri, B., Wu, T., & Shahrjerdi, D. (2017). Advanced integrated sensor and layer transfer technologies for wearable bioelectronics. In 2016 IEEE International Electron Devices Meeting, IEDM 2016 (pp. 6.5.1-6.5.4). [7838362] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2016.7838362