Advanced flexible CMOS integrated circuits on plastic enabled by controlled spalling technology

Davood Shahrjerdi, S. W. Bedell, A. Khakifirooz, K. Fogel, P. Lauro, K. Cheng, J. A. Ott, M. Gaynes, D. K. Sadana

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present, for the first time, mechanically-flexible advanced-node CMOS circuits, including SRAM and ring oscillators, with gate lengths <30 nm and contacted gate pitch of 100 nm. Our novel layer transfer technique called 'controlled spalling' is employed as an incredibly simple, low-cost, and manufacturable approach to separate the finished CMOS circuits from the host silicon substrate. The overall performance of the flexible devices and circuits are carefully examined, demonstrating functional SRAM cells down to V DD=0.6V and ring oscillators with record stage delay of ∼16ps, the best reported to date for a flexible circuit.

Original languageEnglish (US)
Title of host publication2012 IEEE International Electron Devices Meeting, IEDM 2012
DOIs
StatePublished - 2012
Event2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States
Duration: Dec 10 2012Dec 13 2012

Other

Other2012 IEEE International Electron Devices Meeting, IEDM 2012
CountryUnited States
CitySan Francisco, CA
Period12/10/1212/13/12

Fingerprint

CMOS integrated circuits
spalling
Spalling
integrated circuits
CMOS
plastics
Plastics
Networks (circuits)
Static random access storage
oscillators
rings
Silicon
silicon
Substrates
cells
Costs

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Shahrjerdi, D., Bedell, S. W., Khakifirooz, A., Fogel, K., Lauro, P., Cheng, K., ... Sadana, D. K. (2012). Advanced flexible CMOS integrated circuits on plastic enabled by controlled spalling technology. In 2012 IEEE International Electron Devices Meeting, IEDM 2012 [6478981] https://doi.org/10.1109/IEDM.2012.6478981

Advanced flexible CMOS integrated circuits on plastic enabled by controlled spalling technology. / Shahrjerdi, Davood; Bedell, S. W.; Khakifirooz, A.; Fogel, K.; Lauro, P.; Cheng, K.; Ott, J. A.; Gaynes, M.; Sadana, D. K.

2012 IEEE International Electron Devices Meeting, IEDM 2012. 2012. 6478981.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Shahrjerdi, D, Bedell, SW, Khakifirooz, A, Fogel, K, Lauro, P, Cheng, K, Ott, JA, Gaynes, M & Sadana, DK 2012, Advanced flexible CMOS integrated circuits on plastic enabled by controlled spalling technology. in 2012 IEEE International Electron Devices Meeting, IEDM 2012., 6478981, 2012 IEEE International Electron Devices Meeting, IEDM 2012, San Francisco, CA, United States, 12/10/12. https://doi.org/10.1109/IEDM.2012.6478981
Shahrjerdi D, Bedell SW, Khakifirooz A, Fogel K, Lauro P, Cheng K et al. Advanced flexible CMOS integrated circuits on plastic enabled by controlled spalling technology. In 2012 IEEE International Electron Devices Meeting, IEDM 2012. 2012. 6478981 https://doi.org/10.1109/IEDM.2012.6478981
Shahrjerdi, Davood ; Bedell, S. W. ; Khakifirooz, A. ; Fogel, K. ; Lauro, P. ; Cheng, K. ; Ott, J. A. ; Gaynes, M. ; Sadana, D. K. / Advanced flexible CMOS integrated circuits on plastic enabled by controlled spalling technology. 2012 IEEE International Electron Devices Meeting, IEDM 2012. 2012.
@inproceedings{1002200936474aceb7ca6af0f317a740,
title = "Advanced flexible CMOS integrated circuits on plastic enabled by controlled spalling technology",
abstract = "We present, for the first time, mechanically-flexible advanced-node CMOS circuits, including SRAM and ring oscillators, with gate lengths <30 nm and contacted gate pitch of 100 nm. Our novel layer transfer technique called 'controlled spalling' is employed as an incredibly simple, low-cost, and manufacturable approach to separate the finished CMOS circuits from the host silicon substrate. The overall performance of the flexible devices and circuits are carefully examined, demonstrating functional SRAM cells down to V DD=0.6V and ring oscillators with record stage delay of ∼16ps, the best reported to date for a flexible circuit.",
author = "Davood Shahrjerdi and Bedell, {S. W.} and A. Khakifirooz and K. Fogel and P. Lauro and K. Cheng and Ott, {J. A.} and M. Gaynes and Sadana, {D. K.}",
year = "2012",
doi = "10.1109/IEDM.2012.6478981",
language = "English (US)",
isbn = "9781467348706",
booktitle = "2012 IEEE International Electron Devices Meeting, IEDM 2012",

}

TY - GEN

T1 - Advanced flexible CMOS integrated circuits on plastic enabled by controlled spalling technology

AU - Shahrjerdi, Davood

AU - Bedell, S. W.

AU - Khakifirooz, A.

AU - Fogel, K.

AU - Lauro, P.

AU - Cheng, K.

AU - Ott, J. A.

AU - Gaynes, M.

AU - Sadana, D. K.

PY - 2012

Y1 - 2012

N2 - We present, for the first time, mechanically-flexible advanced-node CMOS circuits, including SRAM and ring oscillators, with gate lengths <30 nm and contacted gate pitch of 100 nm. Our novel layer transfer technique called 'controlled spalling' is employed as an incredibly simple, low-cost, and manufacturable approach to separate the finished CMOS circuits from the host silicon substrate. The overall performance of the flexible devices and circuits are carefully examined, demonstrating functional SRAM cells down to V DD=0.6V and ring oscillators with record stage delay of ∼16ps, the best reported to date for a flexible circuit.

AB - We present, for the first time, mechanically-flexible advanced-node CMOS circuits, including SRAM and ring oscillators, with gate lengths <30 nm and contacted gate pitch of 100 nm. Our novel layer transfer technique called 'controlled spalling' is employed as an incredibly simple, low-cost, and manufacturable approach to separate the finished CMOS circuits from the host silicon substrate. The overall performance of the flexible devices and circuits are carefully examined, demonstrating functional SRAM cells down to V DD=0.6V and ring oscillators with record stage delay of ∼16ps, the best reported to date for a flexible circuit.

UR - http://www.scopus.com/inward/record.url?scp=84876138326&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84876138326&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2012.6478981

DO - 10.1109/IEDM.2012.6478981

M3 - Conference contribution

AN - SCOPUS:84876138326

SN - 9781467348706

BT - 2012 IEEE International Electron Devices Meeting, IEDM 2012

ER -