Accurate inversion charge and mobility measurements in enhancement-mode GaAs field-effect transistors with high-k gate dielectrics

Davood Shahrjerdi, J. Nah, T. Akyol, M. Ramon, E. Tutuc, S. K. Banerjee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Recently, extensive studies have been conducted [1-5] in order to realize enhancement-mode III-V MOSFETs by improving the interface between gate oxide and III-V channel. The carrier mobility in advanced substrates is generally regarded as a figure of merit in benchmarking high-mobility channel materials against bulk Si substrates. However, charge trapping can be a source of error in mobility calculation using split C-V method for Si MOSFETs with high-k dielectrics [6]. On the other hand, magnetotransport measurements are suitable for direct measurement of inversion charge density (Ninv) and mobility in MOS devices with high-k gate dielectrics, where significant charge trapping makes evaluation of inversion charge density using split C-V method inaccurate. In this work, we employ gated-Hall-bar (GHB) structures to directly measure the inversion charge and mobility in a GaAs MOSFET.

Original languageEnglish (US)
Title of host publication67th Device Research Conference, DRC 2009
Pages73-74
Number of pages2
DOIs
StatePublished - Dec 11 2009
Event67th Device Research Conference, DRC 2009 - University Park, PA, United States
Duration: Jun 22 2009Jun 24 2009

Other

Other67th Device Research Conference, DRC 2009
CountryUnited States
CityUniversity Park, PA
Period6/22/096/24/09

Fingerprint

Charge trapping
Gate dielectrics
Field effect transistors
Charge density
Galvanomagnetic effects
MOS devices
Carrier mobility
Benchmarking
Substrates
Oxides
High-k dielectric

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Shahrjerdi, D., Nah, J., Akyol, T., Ramon, M., Tutuc, E., & Banerjee, S. K. (2009). Accurate inversion charge and mobility measurements in enhancement-mode GaAs field-effect transistors with high-k gate dielectrics. In 67th Device Research Conference, DRC 2009 (pp. 73-74). [5354894] https://doi.org/10.1109/DRC.2009.5354894

Accurate inversion charge and mobility measurements in enhancement-mode GaAs field-effect transistors with high-k gate dielectrics. / Shahrjerdi, Davood; Nah, J.; Akyol, T.; Ramon, M.; Tutuc, E.; Banerjee, S. K.

67th Device Research Conference, DRC 2009. 2009. p. 73-74 5354894.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Shahrjerdi, D, Nah, J, Akyol, T, Ramon, M, Tutuc, E & Banerjee, SK 2009, Accurate inversion charge and mobility measurements in enhancement-mode GaAs field-effect transistors with high-k gate dielectrics. in 67th Device Research Conference, DRC 2009., 5354894, pp. 73-74, 67th Device Research Conference, DRC 2009, University Park, PA, United States, 6/22/09. https://doi.org/10.1109/DRC.2009.5354894
Shahrjerdi, Davood ; Nah, J. ; Akyol, T. ; Ramon, M. ; Tutuc, E. ; Banerjee, S. K. / Accurate inversion charge and mobility measurements in enhancement-mode GaAs field-effect transistors with high-k gate dielectrics. 67th Device Research Conference, DRC 2009. 2009. pp. 73-74
@inproceedings{9df68d595941442d8ec7bb0b999256e1,
title = "Accurate inversion charge and mobility measurements in enhancement-mode GaAs field-effect transistors with high-k gate dielectrics",
abstract = "Recently, extensive studies have been conducted [1-5] in order to realize enhancement-mode III-V MOSFETs by improving the interface between gate oxide and III-V channel. The carrier mobility in advanced substrates is generally regarded as a figure of merit in benchmarking high-mobility channel materials against bulk Si substrates. However, charge trapping can be a source of error in mobility calculation using split C-V method for Si MOSFETs with high-k dielectrics [6]. On the other hand, magnetotransport measurements are suitable for direct measurement of inversion charge density (Ninv) and mobility in MOS devices with high-k gate dielectrics, where significant charge trapping makes evaluation of inversion charge density using split C-V method inaccurate. In this work, we employ gated-Hall-bar (GHB) structures to directly measure the inversion charge and mobility in a GaAs MOSFET.",
author = "Davood Shahrjerdi and J. Nah and T. Akyol and M. Ramon and E. Tutuc and Banerjee, {S. K.}",
year = "2009",
month = "12",
day = "11",
doi = "10.1109/DRC.2009.5354894",
language = "English (US)",
isbn = "9781424435289",
pages = "73--74",
booktitle = "67th Device Research Conference, DRC 2009",

}

TY - GEN

T1 - Accurate inversion charge and mobility measurements in enhancement-mode GaAs field-effect transistors with high-k gate dielectrics

AU - Shahrjerdi, Davood

AU - Nah, J.

AU - Akyol, T.

AU - Ramon, M.

AU - Tutuc, E.

AU - Banerjee, S. K.

PY - 2009/12/11

Y1 - 2009/12/11

N2 - Recently, extensive studies have been conducted [1-5] in order to realize enhancement-mode III-V MOSFETs by improving the interface between gate oxide and III-V channel. The carrier mobility in advanced substrates is generally regarded as a figure of merit in benchmarking high-mobility channel materials against bulk Si substrates. However, charge trapping can be a source of error in mobility calculation using split C-V method for Si MOSFETs with high-k dielectrics [6]. On the other hand, magnetotransport measurements are suitable for direct measurement of inversion charge density (Ninv) and mobility in MOS devices with high-k gate dielectrics, where significant charge trapping makes evaluation of inversion charge density using split C-V method inaccurate. In this work, we employ gated-Hall-bar (GHB) structures to directly measure the inversion charge and mobility in a GaAs MOSFET.

AB - Recently, extensive studies have been conducted [1-5] in order to realize enhancement-mode III-V MOSFETs by improving the interface between gate oxide and III-V channel. The carrier mobility in advanced substrates is generally regarded as a figure of merit in benchmarking high-mobility channel materials against bulk Si substrates. However, charge trapping can be a source of error in mobility calculation using split C-V method for Si MOSFETs with high-k dielectrics [6]. On the other hand, magnetotransport measurements are suitable for direct measurement of inversion charge density (Ninv) and mobility in MOS devices with high-k gate dielectrics, where significant charge trapping makes evaluation of inversion charge density using split C-V method inaccurate. In this work, we employ gated-Hall-bar (GHB) structures to directly measure the inversion charge and mobility in a GaAs MOSFET.

UR - http://www.scopus.com/inward/record.url?scp=76549109435&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=76549109435&partnerID=8YFLogxK

U2 - 10.1109/DRC.2009.5354894

DO - 10.1109/DRC.2009.5354894

M3 - Conference contribution

AN - SCOPUS:76549109435

SN - 9781424435289

SP - 73

EP - 74

BT - 67th Device Research Conference, DRC 2009

ER -