Absorption measurements at high pressure (0-10kbar) on strained superlattices

P. Garrilovic, K. Meehan, N. Holonyak, K. Hess, W. P. Zurawsky, H. G. Drickamer, M. J. Ludowise, W. T. Dietze, C. R. Lewis

Research output: Contribution to journalArticle

Abstract

Absorption data on strained GaAs1-xPx-GaAs superlattices (SL, 128-period, barrier size LB≈75 Å, quantum-well size Lz≈75 Å, alloy composition x≈0.25) are presented in the range 0-10 kbars. The absorption curves obtained show no exciton show no exciton peaks such as seen in lattice- matched AlxGa1-xAs-GaAs SL's, and the pressure coefficient decreases from 11.5 meV/kbar to ≈ 10.5 meV/kbar in the wells and ≈6.5 meV/kbar at energies approaching and above the barrier energies. This behavior is attributed to the fluctuations in strain caused by the alloy disorder, and clustering, of the barriers.

Original languageEnglish (US)
Pages (from-to)803-806
Number of pages4
JournalSolid State Communications
Volume45
Issue number9
DOIs
StatePublished - 1983

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Superlattices
Excitons
superlattices
Energy barriers
excitons
Crystal lattices
Semiconductor quantum wells
Chemical analysis
quantum wells
disorders
energy
curves
coefficients
gallium arsenide
LDS 751

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Garrilovic, P., Meehan, K., Holonyak, N., Hess, K., Zurawsky, W. P., Drickamer, H. G., ... Lewis, C. R. (1983). Absorption measurements at high pressure (0-10kbar) on strained superlattices. Solid State Communications, 45(9), 803-806. https://doi.org/10.1016/0038-1098(83)90804-9

Absorption measurements at high pressure (0-10kbar) on strained superlattices. / Garrilovic, P.; Meehan, K.; Holonyak, N.; Hess, K.; Zurawsky, W. P.; Drickamer, H. G.; Ludowise, M. J.; Dietze, W. T.; Lewis, C. R.

In: Solid State Communications, Vol. 45, No. 9, 1983, p. 803-806.

Research output: Contribution to journalArticle

Garrilovic, P, Meehan, K, Holonyak, N, Hess, K, Zurawsky, WP, Drickamer, HG, Ludowise, MJ, Dietze, WT & Lewis, CR 1983, 'Absorption measurements at high pressure (0-10kbar) on strained superlattices', Solid State Communications, vol. 45, no. 9, pp. 803-806. https://doi.org/10.1016/0038-1098(83)90804-9
Garrilovic P, Meehan K, Holonyak N, Hess K, Zurawsky WP, Drickamer HG et al. Absorption measurements at high pressure (0-10kbar) on strained superlattices. Solid State Communications. 1983;45(9):803-806. https://doi.org/10.1016/0038-1098(83)90804-9
Garrilovic, P. ; Meehan, K. ; Holonyak, N. ; Hess, K. ; Zurawsky, W. P. ; Drickamer, H. G. ; Ludowise, M. J. ; Dietze, W. T. ; Lewis, C. R. / Absorption measurements at high pressure (0-10kbar) on strained superlattices. In: Solid State Communications. 1983 ; Vol. 45, No. 9. pp. 803-806.
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AU - Meehan, K.

AU - Holonyak, N.

AU - Hess, K.

AU - Zurawsky, W. P.

AU - Drickamer, H. G.

AU - Ludowise, M. J.

AU - Dietze, W. T.

AU - Lewis, C. R.

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AB - Absorption data on strained GaAs1-xPx-GaAs superlattices (SL, 128-period, barrier size LB≈75 Å, quantum-well size Lz≈75 Å, alloy composition x≈0.25) are presented in the range 0-10 kbars. The absorption curves obtained show no exciton show no exciton peaks such as seen in lattice- matched AlxGa1-xAs-GaAs SL's, and the pressure coefficient decreases from 11.5 meV/kbar to ≈ 10.5 meV/kbar in the wells and ≈6.5 meV/kbar at energies approaching and above the barrier energies. This behavior is attributed to the fluctuations in strain caused by the alloy disorder, and clustering, of the barriers.

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