Absolute cross section for the formation of Si(1S) atoms following electron impact dissociation of SiH4

N. Abramzon, K. E. Martus, K. Becker

Research output: Contribution to journalArticle

Abstract

The formation of Si(1S) ground-state atoms from the neutral molecular dissociation of SiH4 by electron impact was studied. The formation absolute cross section was determined by electron scattering, coupled with laser-induced fluorescence measurements. A peak cross section of 4.5×10-17 cm2 was found at an impact energy of 60 eV, which when compared to a SiH4 neutral dissociation cross-section measured in a constant-flow plasma reactor, yields a branching ratio of about 0.037 for the formation process being studied. Absolute calibration is made relative to the cross-section of N2 +(X) ground-state ions formation by electron impact on N2.

Original languageEnglish (US)
Pages (from-to)2250-2254
Number of pages5
JournalJournal of Chemical Physics
Volume113
Issue number6
DOIs
StatePublished - Aug 2000

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Ground state
electron impact
dissociation
Plasma flow
Atoms
Electron scattering
Electrons
cross sections
atoms
Fluorescence
Calibration
Ions
ground state
Lasers
magnetohydrodynamic flow
laser induced fluorescence
electron scattering
reactors
ions
energy

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Absolute cross section for the formation of Si(1S) atoms following electron impact dissociation of SiH4. / Abramzon, N.; Martus, K. E.; Becker, K.

In: Journal of Chemical Physics, Vol. 113, No. 6, 08.2000, p. 2250-2254.

Research output: Contribution to journalArticle

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