A unified charge-current compact model of gallium nitride transistors for RF and digital applications

Kexin Li, Shaloo Rakheja

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present an analytic model to capture the static and dynamic behavior of ultra-scaled III-nitride high electron mobility transistors as well as nanowire field-effect transistors. Excellent agreement of the model against measured data-sets is demonstrated over a broad range of bias and temperature conditions. The model is used for technology-device-circuit co-design for both RF and digital applications.

Original languageEnglish (US)
Title of host publication2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages279-281
Number of pages3
ISBN (Electronic)9781538665084
DOIs
StatePublished - Mar 2019
Event2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore
Duration: Mar 12 2019Mar 15 2019

Publication series

Name2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
CountrySingapore
CitySingapore
Period3/12/193/15/19

Keywords

  • Compact modeling
  • III-nitride HEMTs
  • RF and digital application
  • nanowire FETs

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Hardware and Architecture

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  • Cite this

    Li, K., & Rakheja, S. (2019). A unified charge-current compact model of gallium nitride transistors for RF and digital applications. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 (pp. 279-281). [8731282] (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2019.8731282