A unified charge-current compact model of gallium nitride transistors for RF and digital applications

Kexin Li, Shaloo Rakheja

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present an analytic model to capture the static and dynamic behavior of ultra-scaled III-nitride high electron mobility transistors as well as nanowire field-effect transistors. Excellent agreement of the model against measured data-sets is demonstrated over a broad range of bias and temperature conditions. The model is used for technology-device-circuit co-design for both RF and digital applications.

Original languageEnglish (US)
Title of host publication2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages279-281
Number of pages3
ISBN (Electronic)9781538665084
DOIs
StatePublished - Mar 1 2019
Event2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore
Duration: Mar 12 2019Mar 15 2019

Publication series

Name2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
CountrySingapore
CitySingapore
Period3/12/193/15/19

Fingerprint

Gallium nitride
gallium nitrides
Transistors
transistors
High electron mobility transistors
Field effect transistors
high electron mobility transistors
Nitrides
Nanowires
nitrides
nanowires
field effect transistors
Networks (circuits)
gallium nitride
Temperature
temperature

Keywords

  • Compact modeling
  • III-nitride HEMTs
  • nanowire FETs
  • RF and digital application

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Hardware and Architecture

Cite this

Li, K., & Rakheja, S. (2019). A unified charge-current compact model of gallium nitride transistors for RF and digital applications. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 (pp. 279-281). [8731282] (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2019.8731282

A unified charge-current compact model of gallium nitride transistors for RF and digital applications. / Li, Kexin; Rakheja, Shaloo.

2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 279-281 8731282 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Li, K & Rakheja, S 2019, A unified charge-current compact model of gallium nitride transistors for RF and digital applications. in 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019., 8731282, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Institute of Electrical and Electronics Engineers Inc., pp. 279-281, 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019, Singapore, Singapore, 3/12/19. https://doi.org/10.1109/EDTM.2019.8731282
Li K, Rakheja S. A unified charge-current compact model of gallium nitride transistors for RF and digital applications. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 279-281. 8731282. (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). https://doi.org/10.1109/EDTM.2019.8731282
Li, Kexin ; Rakheja, Shaloo. / A unified charge-current compact model of gallium nitride transistors for RF and digital applications. 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 279-281 (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019).
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