A reliability study of titanium silicide lines using micro-Raman spectroscopy and emission microscopy

I. De Wolf, D. J. Howard, Mahmoud Rasras, A. Lauwers, K. Maex, G. Groeseneken, H. E. Maes

    Research output: Contribution to journalArticle

    Abstract

    Micro-Raman spectroscopy and emission microscopy are used to study the crystallographic phase of 0.25 μm wide TiSi2 lines. It is demonstrated for the first time that emission microscopy allows very fast, simple, non-destructive mapping of the local phase of TiSi2. The results show that there is a direct correlation between the resistance variation of these lines and the local occurrence of the high resistivity C49 phase of TiSi2 in the lines.

    Original languageEnglish (US)
    Pages (from-to)1591-1594
    Number of pages4
    JournalMicroelectronics Reliability
    Volume37
    Issue number10-11
    DOIs
    StatePublished - Jan 1 1997

    Fingerprint

    Raman spectroscopy
    Microscopic examination
    titanium
    Titanium
    microscopy
    occurrences
    electrical resistivity
    titanium silicide

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Condensed Matter Physics
    • Safety, Risk, Reliability and Quality
    • Surfaces, Coatings and Films
    • Electrical and Electronic Engineering

    Cite this

    De Wolf, I., Howard, D. J., Rasras, M., Lauwers, A., Maex, K., Groeseneken, G., & Maes, H. E. (1997). A reliability study of titanium silicide lines using micro-Raman spectroscopy and emission microscopy. Microelectronics Reliability, 37(10-11), 1591-1594. https://doi.org/10.1016/S0026-2714(97)00117-0

    A reliability study of titanium silicide lines using micro-Raman spectroscopy and emission microscopy. / De Wolf, I.; Howard, D. J.; Rasras, Mahmoud; Lauwers, A.; Maex, K.; Groeseneken, G.; Maes, H. E.

    In: Microelectronics Reliability, Vol. 37, No. 10-11, 01.01.1997, p. 1591-1594.

    Research output: Contribution to journalArticle

    De Wolf, I, Howard, DJ, Rasras, M, Lauwers, A, Maex, K, Groeseneken, G & Maes, HE 1997, 'A reliability study of titanium silicide lines using micro-Raman spectroscopy and emission microscopy', Microelectronics Reliability, vol. 37, no. 10-11, pp. 1591-1594. https://doi.org/10.1016/S0026-2714(97)00117-0
    De Wolf, I. ; Howard, D. J. ; Rasras, Mahmoud ; Lauwers, A. ; Maex, K. ; Groeseneken, G. ; Maes, H. E. / A reliability study of titanium silicide lines using micro-Raman spectroscopy and emission microscopy. In: Microelectronics Reliability. 1997 ; Vol. 37, No. 10-11. pp. 1591-1594.
    @article{c328392b2aac4f0fb813b6aab3fcea0f,
    title = "A reliability study of titanium silicide lines using micro-Raman spectroscopy and emission microscopy",
    abstract = "Micro-Raman spectroscopy and emission microscopy are used to study the crystallographic phase of 0.25 μm wide TiSi2 lines. It is demonstrated for the first time that emission microscopy allows very fast, simple, non-destructive mapping of the local phase of TiSi2. The results show that there is a direct correlation between the resistance variation of these lines and the local occurrence of the high resistivity C49 phase of TiSi2 in the lines.",
    author = "{De Wolf}, I. and Howard, {D. J.} and Mahmoud Rasras and A. Lauwers and K. Maex and G. Groeseneken and Maes, {H. E.}",
    year = "1997",
    month = "1",
    day = "1",
    doi = "10.1016/S0026-2714(97)00117-0",
    language = "English (US)",
    volume = "37",
    pages = "1591--1594",
    journal = "Microelectronics Reliability",
    issn = "0026-2714",
    publisher = "Elsevier Limited",
    number = "10-11",

    }

    TY - JOUR

    T1 - A reliability study of titanium silicide lines using micro-Raman spectroscopy and emission microscopy

    AU - De Wolf, I.

    AU - Howard, D. J.

    AU - Rasras, Mahmoud

    AU - Lauwers, A.

    AU - Maex, K.

    AU - Groeseneken, G.

    AU - Maes, H. E.

    PY - 1997/1/1

    Y1 - 1997/1/1

    N2 - Micro-Raman spectroscopy and emission microscopy are used to study the crystallographic phase of 0.25 μm wide TiSi2 lines. It is demonstrated for the first time that emission microscopy allows very fast, simple, non-destructive mapping of the local phase of TiSi2. The results show that there is a direct correlation between the resistance variation of these lines and the local occurrence of the high resistivity C49 phase of TiSi2 in the lines.

    AB - Micro-Raman spectroscopy and emission microscopy are used to study the crystallographic phase of 0.25 μm wide TiSi2 lines. It is demonstrated for the first time that emission microscopy allows very fast, simple, non-destructive mapping of the local phase of TiSi2. The results show that there is a direct correlation between the resistance variation of these lines and the local occurrence of the high resistivity C49 phase of TiSi2 in the lines.

    UR - http://www.scopus.com/inward/record.url?scp=0031251558&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0031251558&partnerID=8YFLogxK

    U2 - 10.1016/S0026-2714(97)00117-0

    DO - 10.1016/S0026-2714(97)00117-0

    M3 - Article

    VL - 37

    SP - 1591

    EP - 1594

    JO - Microelectronics Reliability

    JF - Microelectronics Reliability

    SN - 0026-2714

    IS - 10-11

    ER -