A reliability study of titanium silicide lines using micro-Raman spectroscopy and emission microscopy

I. De Wolf, D. J. Howard, Mahmoud Rasras, A. Lauwers, K. Maex, G. Groeseneken, H. E. Maes

Research output: Contribution to journalArticle

Abstract

Micro-Raman spectroscopy and emission microscopy are used to study the crystallographic phase of 0.25 μm wide TiSi2 lines. It is demonstrated for the first time that emission microscopy allows very fast, simple, non-destructive mapping of the local phase of TiSi2. The results show that there is a direct correlation between the resistance variation of these lines and the local occurrence of the high resistivity C49 phase of TiSi2 in the lines.

Original languageEnglish (US)
Pages (from-to)1591-1594
Number of pages4
JournalMicroelectronics Reliability
Volume37
Issue number10-11
DOIs
StatePublished - Jan 1 1997

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Raman spectroscopy
Microscopic examination
titanium
Titanium
microscopy
occurrences
electrical resistivity
titanium silicide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

A reliability study of titanium silicide lines using micro-Raman spectroscopy and emission microscopy. / De Wolf, I.; Howard, D. J.; Rasras, Mahmoud; Lauwers, A.; Maex, K.; Groeseneken, G.; Maes, H. E.

In: Microelectronics Reliability, Vol. 37, No. 10-11, 01.01.1997, p. 1591-1594.

Research output: Contribution to journalArticle

De Wolf, I. ; Howard, D. J. ; Rasras, Mahmoud ; Lauwers, A. ; Maex, K. ; Groeseneken, G. ; Maes, H. E. / A reliability study of titanium silicide lines using micro-Raman spectroscopy and emission microscopy. In: Microelectronics Reliability. 1997 ; Vol. 37, No. 10-11. pp. 1591-1594.
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AU - Groeseneken, G.

AU - Maes, H. E.

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