A physics-based compact model for FETs from diffusive to ballistic carrier transport regimes

Shaloo Rakheja, Mark Lundstrom, Dimitri Antoniadis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper discusses a new emission-diffusion-based compact model for FETs to describe carrier transport in both short and long channel devices. The new model provides a description of the current at any drain bias without empirical fitting and predicts the injection velocity (device on-current). The new model is fully consistent with the widely used virtual-source model for describing transport in quasi-ballistic transistors. The accuracy of the new model is demonstrated by comparison with measured I-V data of III-V HEMTs and ETSOI silicon MOSFETs.

Original languageEnglish (US)
Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages35.1.1-35.1.4
Volume2015-February
EditionFebruary
DOIs
StatePublished - Feb 20 2015
Event2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States
Duration: Dec 15 2014Dec 17 2014

Other

Other2014 60th IEEE International Electron Devices Meeting, IEDM 2014
CountryUnited States
CitySan Francisco
Period12/15/1412/17/14

Fingerprint

Carrier transport
Ballistics
Field effect transistors
ballistics
field effect transistors
Physics
physics
High electron mobility transistors
Silicon
high electron mobility transistors
Transistors
transistors
injection
silicon

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Rakheja, S., Lundstrom, M., & Antoniadis, D. (2015). A physics-based compact model for FETs from diffusive to ballistic carrier transport regimes. In Technical Digest - International Electron Devices Meeting, IEDM (February ed., Vol. 2015-February, pp. 35.1.1-35.1.4). [7047172] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2014.7047172

A physics-based compact model for FETs from diffusive to ballistic carrier transport regimes. / Rakheja, Shaloo; Lundstrom, Mark; Antoniadis, Dimitri.

Technical Digest - International Electron Devices Meeting, IEDM. Vol. 2015-February February. ed. Institute of Electrical and Electronics Engineers Inc., 2015. p. 35.1.1-35.1.4 7047172.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Rakheja, S, Lundstrom, M & Antoniadis, D 2015, A physics-based compact model for FETs from diffusive to ballistic carrier transport regimes. in Technical Digest - International Electron Devices Meeting, IEDM. February edn, vol. 2015-February, 7047172, Institute of Electrical and Electronics Engineers Inc., pp. 35.1.1-35.1.4, 2014 60th IEEE International Electron Devices Meeting, IEDM 2014, San Francisco, United States, 12/15/14. https://doi.org/10.1109/IEDM.2014.7047172
Rakheja S, Lundstrom M, Antoniadis D. A physics-based compact model for FETs from diffusive to ballistic carrier transport regimes. In Technical Digest - International Electron Devices Meeting, IEDM. February ed. Vol. 2015-February. Institute of Electrical and Electronics Engineers Inc. 2015. p. 35.1.1-35.1.4. 7047172 https://doi.org/10.1109/IEDM.2014.7047172
Rakheja, Shaloo ; Lundstrom, Mark ; Antoniadis, Dimitri. / A physics-based compact model for FETs from diffusive to ballistic carrier transport regimes. Technical Digest - International Electron Devices Meeting, IEDM. Vol. 2015-February February. ed. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 35.1.1-35.1.4
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