A 144MHz integrated resonant regulating rectifier with hybrid pulse modulation

Chul Kim, Sohmyung Ha, Jiwoong Park, Abraham Akinin, Patrick P. Mercier, Gert Cauwenberghs

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents a CMOS fully-integrated resonant regulating rectifier (IR3) for inductive power telemetry in implantable devices. Employing PWM and PFM feedback, the IR3 achieves 1.87% of ΔVDD/VDD ratio despite a tenfold change in load with a 1nF decoupling capacitor. At 1V regulation of a 100μW load from a 144MHz RF input, the measured voltage conversion efficiency is greater than 92% at under 5.2mVpp ripple and 54% power conversion efficiency. Implemented in 180nm SOI CMOS, the IR3 circuit occupies 0.078mm2 active area.

Original languageEnglish (US)
Title of host publication2015 Symposium on VLSI Circuits, VLSI Circuits 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesC284-C285
ISBN (Electronic)9784863485020
DOIs
StatePublished - Aug 31 2015
Event29th Annual Symposium on VLSI Circuits, VLSI Circuits 2015 - Kyoto, Japan
Duration: Jun 17 2015Jun 19 2015

Publication series

NameIEEE Symposium on VLSI Circuits, Digest of Technical Papers
Volume2015-August

Other

Other29th Annual Symposium on VLSI Circuits, VLSI Circuits 2015
CountryJapan
CityKyoto
Period6/17/156/19/15

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Kim, C., Ha, S., Park, J., Akinin, A., Mercier, P. P., & Cauwenberghs, G. (2015). A 144MHz integrated resonant regulating rectifier with hybrid pulse modulation. In 2015 Symposium on VLSI Circuits, VLSI Circuits 2015 (pp. C284-C285). [7231292] (IEEE Symposium on VLSI Circuits, Digest of Technical Papers; Vol. 2015-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIC.2015.7231292